Determination of vacancy and self-interstitial contributions to gallium self-diffusion in GaAs
- 1 November 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (9) , 4823-4826
- https://doi.org/10.1063/1.349048
Abstract
A quantitative determination of the contributions of the triply negatively charged Ga vacancies (V3−Ga) and of the doubly positively charged Ga self‐interstitials (I2+Ga) to the Ga self‐diffusion coefficient in GaAs has been carried out. Under thermal equilibrium and intrinsic conditions, the V3−Ga contribution is characterized by an activation enthalpy of 6 eV for As‐rich crystals and of 7.52 eV for Ga‐rich crystals, while the I2+Ga contribution is characterized by an activation enthalpy of 4.89 eV for As‐rich crystals and of 3.37 eV for Ga‐rich crystals.This publication has 21 references indexed in Scilit:
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