Modeling of deep-submicrometer MOSFETs: random impurity effects, threshold voltage shifts and gate capacitance attenuation
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 259-262
- https://doi.org/10.1109/iwce.1998.742760
Abstract
The authors present simulation results for the subthreshold characteristics of n-channel MOSFETs with 0.1 /spl mu/m gate-length and 0.05 /spl mu/m gate-width obtained with our 3D-DD simulator. We also presented a new method that one can successfully use in a particle-based simulator to properly account for the short-range portions of the e-e and e-i interactions without double-counting the long-range portions of these two interaction terms.Keywords
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