Anisotropic transport in a modulation-doped GaAs quantum well microstructured by growth on a submicron grating

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Abstract
We report on the transport properties of quantum wire‐like GaAs/AlGaAs heterostructures, obtained by organometallic chemical vapor deposition of a modulation‐doped quantum well structure on a submicron grating, etched in the substrate prior to growth. Shubnikov–deHaas and mobility measurements show that the electron gas is preserved in the grating areas and that transport parallel to the grating is not severely degraded as compared to an unpatterned control sample. Perpendicular to the grating the mobility strongly decreases at low temperatures, leading to an anisotropy ratio of 1:200. The temperature dependence of the perpendicular mobility indicates strong boundary scattering at the GaAs/AlGaAs interfaces.