Structural characterization of ordered SiGe films grown on Ge(100) and Si(100) substrates
- 1 October 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (7) , 3804-3807
- https://doi.org/10.1063/1.363333
Abstract
We observe the formation of an ordered structure in Si1−xGex films grown on Ge(100) substrates, as well as on Si(100) substrates, by molecular beam epitaxy. The structural characterization of these ordered films is performed. The degree of order in the films is quantitatively measured using x-ray diffraction. The dependence of the degree of order on Ge composition is similar between films on Ge(100) and Si(100) substrates. By careful x-ray diffraction analysis, we find that the degree of order is not equivalent in variants.This publication has 13 references indexed in Scilit:
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