Ion-implanted polysilicon diffusion sources

This publication has 14 references indexed in Scilit:

• Low energy range distributions of 10B and 11B in amorphous and crystalline silicon
  Nuclear Instruments and Methods in Physics Research, 1982
• Effect of emitter contact on current gain of silicon bipolar devices
  IEEE Transactions on Electron Devices, 1980
• An AES-SIMS study of silicon oxidation induced by ion or electron bombardment
  Applications of Surface Science, 1980
• Shallow junctions by high-dose As implants in Si: experiments and modeling
  Journal of Applied Physics, 1980
• The SIS tunnel emitter: A theory for emitters with thin interface layers
  IEEE Transactions on Electron Devices, 1979
• The lateral diffusion of boron in polycrystalline silicon and its influence on the fabrication of sub-micron MOSTs
  Solid-State Electronics, 1977
• High-performance transistors with arsenic-implanted polysil emitters
  IEEE Journal of Solid-State Circuits, 1976
• Residual lattice damage in As-implanted and annealed Si
  Journal of Vacuum Science and Technology, 1976
• Fully ion-implanted bipolar transistors
  IEEE Transactions on Electron Devices, 1974
• Diffusion of Boron into Silicon
  Journal of Applied Physics, 1960