Self organized defect free InAs/GaAs and InAs/InGaAs/GaAs quantum dots with high lateral density grown by MOCVD

This publication has 11 references indexed in Scilit:

• Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
  Applied Physics Letters, 1997
• InAs/GaAs Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
  Japanese Journal of Applied Physics, 1997
• Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing
  Applied Physics Letters, 1996
• Room temperature CW operation at the ground stateof self-formed quantum dot lasers with multi-stacked dot layer
  Electronics Letters, 1996
• Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots
  Applied Physics Letters, 1996
• Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth
  Physical Review B, 1996
• Room temperature lasing from InGaAs quantum dots
  Electronics Letters, 1996
• Room-temperature operation of In _0.4 Ga _0.6 As/GaAsself-organised quantum dot lasers
  Electronics Letters, 1996
• Self-organization processes of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
  Applied Physics Letters, 1996
• Low threshold, large T _o injectionlaser emissionfrom (InGa)As quantum dots
  Electronics Letters, 1994