InAs/GaAs Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
- 1 June 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (6S) , 4129
- https://doi.org/10.1143/jjap.36.4129
Abstract
InAs quantum dots (QDs) have been grown by metalorganic chemical vapor deposition on exactly (001) oriented GaAs using the Stranski-Krastanow growth mode. The samples exhibit a high average dot density of 4 ×1010 cm-2 with no defects over macroscopic areas. The QDs show bright room temperature luminescence at around 1.1 eV. Vertical dot stacks consisting of up to 5 QD sheets with various GaAs separation layer thicknesses have been produced. Transmission eletron microscope images show pronounced QD ordering in the growth direction. For thin separation layers the dot luminescence is red shifted by ∼ 70 meV for the stacked dots as compared to single dot sheets. A low threshold (100 A/cm2 at 77 K) separate confinement heterojunction laser with a five-fold dot stack as an active medium operating at up to room temperature is demonstrated.Keywords
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