Effects of substrate misorientation and growth rate on ordering in GaInP

This publication has 28 references indexed in Scilit:

• Adatom processes near step-edges and evolution of long range order in semiconductor alloys grown from vapor phase
  Applied Physics Letters, 1992
• Use of surface grooves to control ordering in GaAsP
  Applied Physics Letters, 1991
• Effects of substrate misorientation on doping characteristics and band gap energy for InGaAlP crystals grown by metalorganic chemical vapor deposition
  Journal of Crystal Growth, 1991
• Atomic ordering in III/V semiconductor alloys
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
• Re-examination of the formation mechanism of CuPt-type natural superlattices in alloy semiconductors
  Journal of Crystal Growth, 1991
• Study on microstructure of ordered InGaAs crystals grown on (110)InP substrates by transmission electron microscopy
  Applied Physics Letters, 1991
• Effect of growth rate on the band gap of Ga0.5In0.5P
  Applied Physics Letters, 1990
• Organometallic vapor-phase epitaxy of high-quality Ga0.51In0.49P at high growth rates
  Journal of Applied Physics, 1989
• GaInP/AlGaInP double-heterostructure laser grown on a (111)B-oriented GaAs substrate by metalorganic chemical vapour deposition
  Electronics Letters, 1988
• Long-Range Order inAlxGa1−xAs
  Physical Review Letters, 1985