Isoelectronic bound exciton emission from Si-rich silicon-germanium alloys
- 3 September 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (10) , 954-956
- https://doi.org/10.1063/1.103523
Abstract
We report the observation and characterization of luminescence in the wavelength range 1.1 μm<λ< 1.4 μm from silicon-rich silicon-germanium alloys, grown by molecular beam epitaxy, implanted with beryllium atoms. The luminescence originates with the radiative decay of an exciton bound to an isoelectronic impurity complex. The wavelength of this emission can be controlled by varying the Ge concentration.Keywords
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