Coherence between gate- and drain-current fluctuations in MESFET's and MODFET's biased in the ohmic region
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (10) , 2377-2382
- https://doi.org/10.1109/16.158812
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- 1/f noise in MODFETs at low drain biasIEEE Transactions on Electron Devices, 1990
- On 1/f trapping noise in MOSTsIEEE Transactions on Electron Devices, 1990
- Gate current 1/f noise in GaAs MESFET'sIEEE Transactions on Electron Devices, 1988
- A chemical and structural investigation of Schottky and ohmic Au/GaAs contactsJournal of Vacuum Science & Technology A, 1987
- 1/f; noise model for MOSTs biased in nonohmic regionSolid-State Electronics, 1980