Application of the backscattering method for the measurement of diffusion of zinc in aluminium
- 16 January 1973
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 15 (1) , 113-119
- https://doi.org/10.1002/pssa.2210150113
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- A comparison of diffusion penetration plots obtained from alpha energy degradation and electrochemical sectioningJournal of Nuclear Materials, 1971
- Low-temperature migration of silicon through metal films importance of silicon-;metal interfacePhysica Status Solidi (a), 1971
- Channeling-Effect Analysis of Thin Films on Silicon: Aluminum OxideJournal of Applied Physics, 1971
- Determination of Surface Impurity Concentration Profiles by Nuclear BackscatteringJournal of Applied Physics, 1971
- LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUMApplied Physics Letters, 1971
- Diffusion of Gold and Copper in AluminumTransactions of the Japan Institute of Metals, 1971
- Investigation of ion-implanted crystals by means of directional effects in charged particle reaction yieldsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1969
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967
- RANGES OF Na, K, Kr, AND Xe IONS IN AMORPHOUS Al2O3 IN THE ENERGY REGION 40–1 000 KEVCanadian Journal of Physics, 1967
- Chemical analysis of surfaces using alpha particlesJournal of Geophysical Research, 1965