Avalanche-injected hole current in SiO2
- 1 November 1972
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (9) , 417-419
- https://doi.org/10.1063/1.1654437
Abstract
Results are given on the current of holes through an insulating double layer of SiO2 and Si3N4 on silicon. The holes originated from an avalanching p‐n junction in the silicon and were injected into the SiO2. The results can be explained by assuming a space‐charge‐limited hole current in the SiO2 in the presence of traps exponentially distributed in energy. A value of about 10−3 cm2V−1 sec−1 was found for μ, the hole mobility in the SiO2.Keywords
This publication has 13 references indexed in Scilit:
- Hole Currents in Thermally Grown SiO2Journal of Applied Physics, 1972
- On the emitter degradation by avalanche breakdown in planar transistorsSolid-State Electronics, 1971
- Photoinjection into SiO2: Electron Scattering in the Image Force Potential WellJournal of Applied Physics, 1971
- Photoinjection into SiO2: Use of Optical Interference to Determine Electron and Hole ContributionsJournal of Applied Physics, 1969
- AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SiO2Applied Physics Letters, 1969
- Fowler-Nordheim Tunneling into Thermally Grown SiO2Journal of Applied Physics, 1969
- PHOTOEMISSION OF ELECTRONS AND HOLES INTO SILICON NITRIDEApplied Physics Letters, 1968
- Photoemission of Holes from Silicon into Silicon DioxidePhysical Review B, 1966
- Photoemission of Electrons from Silicon into Silicon DioxidePhysical Review B, 1965
- Space-Charge-Limited Currents in Organic CrystalsJournal of Applied Physics, 1962