Dose rate and annealing effects on total dose response of MOS and bipolar circuits
- 1 December 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 42 (6) , 1567-1574
- https://doi.org/10.1109/23.488751
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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