Converting a bulk radiation-hardened BiCMOS technology into a dielectrically-isolated process
Open Access
- 1 December 1993
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 40 (6) , 1774-1779
- https://doi.org/10.1109/23.273480
Abstract
Development of a dielectrically-isolated (DI) radiation-hardened BiCMOS process is reported. The process is fabricated on a bonded-wafer silicon-on-insulator (SOI) substrate and employs deep trenches for lateral device isolation.This publication has 3 references indexed in Scilit:
- UHF-1: a high speed complementary bipolar analog process on SOIPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- XFCB: a high speed complementary bipolar process on bonded SOIPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- The use of multiple oxygen implants for fabrication of bipolar silicon-on-insulator integrated circuitsIEEE Transactions on Nuclear Science, 1988