Doped multichannel AlAs _0.56 Sb _0.44 /In _0.53 Ga _0.47 Asfield effect transistors

This publication has 8 references indexed in Scilit:

• Transimpedance amplifiers fabricated withIn _0.52 Al _0.48 As/In _0.53 Ga _0.47 As doped-channel heterostructures
  Electronics Letters, 1998
• Characteristics of fully quaternaryIn _0.52 (Al _0.8 Ga _0.2 ) _0.48 As/In _0.53 (Al _0.2 Ga _0.8 ) _0.47 Asheterostructures in doped-channel FETs
  Electronics Letters, 1998
• Stacked pentacene layer organic thin-film transistors with improved characteristics
  IEEE Electron Device Letters, 1997
• Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure
  Applied Physics Letters, 1997
• Pseudomorphic step-doped channels field-effect transistor(SDCFET)
  Electronics Letters, 1996
• InGaAs-based resonant tunnelling barrier structures grown by MBE
  Semiconductor Science and Technology, 1994
• A pseudomorphic AlGaAs/n/sup +/-InGaAs metal-insulator-doped channel FET for broad-band, large-signal applications
  IEEE Electron Device Letters, 1991
• Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
  Japanese Journal of Applied Physics, 1990