The influence of surface states on a pulsed MOS capacitor recombination lifetime measurement
- 31 March 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (3) , 189-195
- https://doi.org/10.1016/0038-1101(80)90001-5
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Non-steady-state bulk-generation processes in pulsed metal-insulator-semiconductor capacitorsSolid-State Electronics, 1976
- A method to extract interface state parameters from the MIS parallel conductance techniqueSolid-State Electronics, 1973
- Measuring the lifetime of minority carriers in MIS structuresSolid-State Electronics, 1969
- Low-temperature hysteresis effects in metal-oxide-silicon capacitors caused by surface-state trappingIEEE Transactions on Electron Devices, 1968
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967