Dielectric Properties of Zirconium Oxide Grown by Atomic Layer Deposition from Iodide Precursor
- 1 January 2001
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 148 (12) , F227-F232
- https://doi.org/10.1149/1.1418379
Abstract
ZrO2ZrO2 films were grown from ZrI4ZrI4 and H2OH2O2H2OH2O2 on p-Si(100) substrates using the atomic layer deposition technique. The influence of deposition conditions on the dielectric properties of ZrO2ZrO2 films was investigated. The breakdown field exceeded 2 MV/cm in the films grown at 325-500°C. The relative permittivity measured at 10 kHz was 20-24 in the films deposited at 275-325°C. The dissipation factor of these films was as low as 0.02-0.03. The relative permittivity decreased to 7 and the dissipation factor increased to 0.6 when the growth temperature was raised to 450-500°C. Variation of the measurement frequency from 1 to 100 kHz had only a slight influence on the permittivity values. Hysteresis of the capacitance-voltage curves indicated that a considerable amount of deep levels at the oxide-semiconductor interface and/or in the oxide were recharged under dc bias. The density of rechargeable states increased with the deposition temperature, and the recharging mechanism also depended on the substrate temperature used for the ZrO2ZrO2 growth. © 2001 The Electrochemical Society. All rights reserved.Keywords
This publication has 35 references indexed in Scilit:
- Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxideJournal of Crystal Growth, 2001
- Development of Dielectric Properties of Niobium Oxide, Tantalum Oxide, and Aluminum Oxide Based Nanolayered MaterialsJournal of the Electrochemical Society, 2001
- Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric applicationApplied Physics Letters, 2000
- Electrical properties of ZrO2 gate dielectric on SiGeApplied Physics Letters, 2000
- The effects of chemical bonding and band offset constraints at Si-dielectric interfaces on the integration of alternative high-K dielectrics into aggressively-scaled CMOS Si devicesMicroelectronic Engineering, 1999
- Charge properties of aluminum oxide layers synthesized by molecular layeringTechnical Physics Letters, 1998
- Properties of (Nb1 − xTax)2O5 solid solutions and (Nb1 − xTax)2O5-ZrO2 nanolaminates grown by Atomic Layer EpitaxyNanostructured Materials, 1997
- Atomic layer epitaxy growth of aluminum oxide thin films from a novel Al(CH3)2Cl precursor and H2OJournal of Vacuum Science & Technology A, 1997
- The dielectric properties of zirconiaJournal of Materials Science, 1992
- Growth and characterization of zirconium oxide filmsMaterials Research Bulletin, 1990