Structure and properties of TiSi2 films on Si, obtained by Ti and Si co-evaporation in high vacuum
- 31 December 1991
- Vol. 42 (18) , 1191-1201
- https://doi.org/10.1016/0042-207x(91)90130-b
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Diffraction and X-ray reflection at grazing incidence. Possibilities of studying multilayer thin-film structuresJournal of Applied Crystallography, 1989
- Silicon loss during TiSi2 formationJournal of Applied Physics, 1987
- TiSi2thickness limitations for use with shallow junctions and SWAMI or LOCOS isolationIEEE Transactions on Electron Devices, 1986
- Influence of oxygen on the formation of refractory metal silicidesThin Solid Films, 1986
- Localized epitaxial growth of C54 and C49 TiSi2 on (111)SiApplied Physics Letters, 1985
- On the Epitaxial Relationships of TiSi2 on SiliconJapanese Journal of Applied Physics, 1985
- Process and Device Performance of Submicrometer-Channel CMOS Devices Using Deep-Trench Isolation and Self-Aligned TiSi/sub 2/ TechnologiesIEEE Journal of Solid-State Circuits, 1985