Nanoscale GaAs metal–semiconductor–metal photodetectors fabricated using nanoimprint lithography
- 19 April 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (16) , 2381-2383
- https://doi.org/10.1063/1.123858
Abstract
GaAs metal–semiconductor–metal photodetectors (MSM PDs) with a variety of nanoscale finger spacings and widths were fabricated using nanoimprint lithography (NIL). Compared with MSM-PDs fabricated using electron-beam lithography and photolithography, the MSM-PDs fabricated using NIL do not show observable degradation in the device characteristics if the imprinting pressures are kept at 600 psi or below, although they do degrade at higher pressures.Keywords
This publication has 6 references indexed in Scilit:
- Nanoscale silicon field effect transistors fabricated using imprint lithographyApplied Physics Letters, 1997
- Nanoimprint lithographyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Nanoscale tera-hertz metal-semiconductor-metal photodetectorsIEEE Journal of Quantum Electronics, 1992
- Double 15-nm-wide metal gates 10 nm apart and 70 nm thick on GaAsJournal of Vacuum Science & Technology B, 1990
- Surface Damage on GaAs Induced by Reactive Ion Etching and Sputter EtchingJournal of the Electrochemical Society, 1986
- The use of Schottky barrier diodes for the detection of surface contamination and damage in the fabrication of GaAs MESFETSVacuum, 1985