The degradation of MOS transistors resulting from junction avalanche breakdown
- 1 September 1972
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 11 (4) , 369-IN2
- https://doi.org/10.1016/0026-2714(72)90582-3
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Electrochemical Charging of Thermal SiO2 Films by Injected Electron CurrentsJournal of Applied Physics, 1971
- Channel Shortening in MOS Transistors during Junction Walk-OutApplied Physics Letters, 1971
- MEMORY BEHAVIOR IN A FLOATING-GATE AVALANCHE-INJECTION MOS (FAMOS) STRUCTUREApplied Physics Letters, 1971
- A New Instability in MOS Transistor Caused by Hot Electron and Hole Injection from Drain Avalanche Plasma into Gate OxideJapanese Journal of Applied Physics, 1970
- AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SiO2Applied Physics Letters, 1969