Effective density-of-states distributions for accurate modeling of polycrystalline-silicon thin-film transistors
- 15 January 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 75 (2) , 908-913
- https://doi.org/10.1063/1.356446
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Physical models for degradation effects in polysilicon thin-film transistorsIEEE Transactions on Electron Devices, 1993
- Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenationIEEE Electron Device Letters, 1991
- Numerical Simulations of Amorphous and Polycrystalline Silicon Thin-Film TransistorsJapanese Journal of Applied Physics, 1990
- Mechanism of device degradation in n- and p-channel polysilicon TFTs by electrical stressingIEEE Electron Device Letters, 1990
- A full-color LCD addressed by poly-Si TFTs fabricated below 450 degrees CIEEE Transactions on Electron Devices, 1989
- Retardation of nucleation rate for grain size enhancement by deep silicon ion implantation of low-pressure chemical vapor deposited amorphous silicon filmsJournal of Applied Physics, 1989
- The Sub-Threshold Characteristics of Polysilicon Thin-Film-TransistorsJapanese Journal of Applied Physics, 1988
- Field-effect analysis for the determination of gap-state density and Fermi-level temperature dependence in polycrystalline siliconPhilosophical Magazine Part B, 1988
- Polycrystalline-silicon device technology for large-area electronicsIEEE Transactions on Electron Devices, 1986
- Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline SiliconIEEE Transactions on Electron Devices, 1985