VII. The Hall effect in inversion layers
- 1 November 1978
- journal article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 38 (5) , 535-548
- https://doi.org/10.1080/13642817808246402
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Threshold conduction in inversion layersJournal of Physics C: Solid State Physics, 1978
- Conductance Anomalies and Electronic States in Silicon Inversion Layers near Threshold at Low TemperaturesJournal of the Physics Society Japan, 1977
- THE ANDERSON TRANSITION IN SILICON INVERSION LAYERSLe Journal de Physique Colloques, 1976
- Conduction mechanisms in bandtails at the SiSiO2 interfaceSurface Science, 1976
- Conductivity and mobility edges for two-dimensional disordered systemsJournal of Physics C: Solid State Physics, 1975
- Frequency Dependence of the Electron Conductivity in the Silicon Inversion Layer in the Metallic and Localized RegimesPhysical Review Letters, 1975
- Disorder-induced carrier localization in silicon surface inversion layersApplied Physics Letters, 1974
- Compensation Dependence of Impurity Conduction in Antimony-Doped GermaniumPhysical Review B, 1965
- Hall Effect in Impurity ConductionPhysical Review B, 1961
- Hall Effect and Conductivity in Porous MediaJournal of Applied Physics, 1956