Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor
- 1 December 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 43 (6) , 2651-2658
- https://doi.org/10.1109/23.556849
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Radiation induced shift study in parasitic MOS structures by 2D numerical simulationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Evidence of negative charge trapping in high temperature annealed thermal oxideIEEE Transactions on Nuclear Science, 1994
- A two-dimensional numerical simulation of oxide charge buildup in MOS transistors due to radiationIEEE Transactions on Electron Devices, 1994
- Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devicesIEEE Transactions on Nuclear Science, 1991
- Applied Field and Total Dose Dependence of Trapped Charge Buildup in MOS DevicesIEEE Transactions on Nuclear Science, 1987
- Subthreshold currents in CMOS transistors made on oxygen-implanted siliconElectronics Letters, 1983
- The Influence of the LOCOS Processing Parameters on the Shape of the Bird's Beak StructureJournal of the Electrochemical Society, 1983
- A study of oxide traps and interface states of the silicon-silicon dioxide interfaceJournal of Applied Physics, 1980
- Time-resolved hole transport inPhysical Review B, 1977
- Model for Thickness Dependence of Radiation Charging in MOS StructuresIEEE Transactions on Nuclear Science, 1976