Doping profiles studied by scanning tunneling spectroscopy
- 6 April 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (14) , 1715-1716
- https://doi.org/10.1063/1.107195
Abstract
Tunneling spectra have been measured at various locations on uniformly doped, ion-implanted, and epitaxial silicon samples. We find that the I-V characteristics consistently vary with the variation of doping concentrations. Significant differences in the I-V curves are observed between n- and p-type samples. Combined with the high resolution of scanning tunneling microscopes (STM), this principle can be used to obtain two-dimensional doping profiles in submicron VLSI circuits.Keywords
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