An SPDD p-MOSFET structure suitable for 0.1 and sub 0.1 micron channel length and its electrical characteristics
- 1 January 1992
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 897-900
- https://doi.org/10.1109/iedm.1992.307501
Abstract
A new solid-phase diffused drain (SPDD) structure has been developed for 0.1 and sub-0.1 um p-MOSFET technology. Highly doped ultra-shallow p/sup +/ source and drain junctions were achieved by solid-phase diffusion from the highly doped BSG sidewall. The extremely shallow and high concentration drain profile significantly improved short channel effects without increasing parasitic resistance. The excellent electrical characteristics and good hot-carrier reliability of the SPDD p-MOSFET are demonstrated.Keywords
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