Boron-doped diamond films using trimethylborate as a dopant source in methane-carbon dioxide gas mixtures
- 30 April 1994
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 3 (4-6) , 632-637
- https://doi.org/10.1016/0925-9635(94)90239-9
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Growth of diamond from CO2-(C2H2, CH4) gas systems, without supplying additional hydrogen gasSurface and Coatings Technology, 1992
- Effects of boron doping on the surface morphology and structural imperfections of diamond filmsDiamond and Related Materials, 1992
- High temperature Schottky diodes with boron-doped homoepitaxial diamond baseMaterials Research Bulletin, 1990
- Epitaxial Growth of High Quality Diamond Film by the Microwave Plasma-Assisted Chemical-Vapor-Deposition MethodJapanese Journal of Applied Physics, 1990
- Electrical Characteristics of Metal Contacts to Boron-Doped Diamond Epitaxial FilmJapanese Journal of Applied Physics, 1989
- Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond filmsApplied Physics Letters, 1988
- Synthesis of Diamond Thin Films Having Semiconductive PropertiesJapanese Journal of Applied Physics, 1988
- The C-V characteristics of Schottky barriers on laboratory grown semiconducting diamondsSolid-State Electronics, 1973