Optical determination of oxygen outdiffusion in epitaxial silicon grown on n-type Czochralski substrates
- 8 October 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (15) , 1511-1513
- https://doi.org/10.1063/1.103379
Abstract
Oxygen solid‐state outdiffusion from the substrate to the epitaxial layer was investigated by using micro‐Fourier transform infrared measurements in a transversal wafer cross‐section configuration. Interstitial oxygen concentration, obtained by analyzing the 1107 cm−1absorption band, indicated that an oxygen content, clearly detectable by the infrared technique, is present in the epitaxial layer near the interface. To our knowledge this is the first evidence of oxygen outdiffusion from the substrate into the epitaxial layer.Keywords
This publication has 11 references indexed in Scilit:
- Correction Factors for the Determination of Oxygen in Silicon by IR SpectrometryJournal of the Electrochemical Society, 1989
- Infrared measurements of interstitial oxygen in heavily doped siliconJournal of Crystal Growth, 1988
- The oxygen donor in siliconPhysica B+C, 1987
- Optical Interference to Determine the Free Carrier Concentration in Semiconducting Epitaxial LayersJournal of the Electrochemical Society, 1986
- Quantitative Spectroscopy of Interstitial Oxygen in SiliconJournal of the Electrochemical Society, 1985
- The Diffusivity and Solubility of Oxygen in SiliconMRS Proceedings, 1985
- Layout and bias considerations for preventing transiently triggered latchup in CMOSIEEE Transactions on Electron Devices, 1984
- Precipitation of oxygen in silicon kinetics, solubility, diffusivity and particle sizePhysica B+C, 1983
- Bestimmung von parts per billion sauerstoff in silizium durch eichung der IR-absorption bei 77°KSolid-State Electronics, 1973
- Electrical and Optical Properties of Heat-Treated SiliconPhysical Review B, 1957