Zinc-doped GaAs epilayers grown by atmospheric-pressure MOCVD using diethylzinc
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 98 (4) , 630-636
- https://doi.org/10.1016/0022-0248(89)90299-6
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Controlled carbon doping of GaAs by metalorganic vapor phase epitaxyApplied Physics Letters, 1988
- Investigation of zinc incorporation in GaAs epilayers grown by low-pressure metalorganic chemical-vapor depositionJournal of Applied Physics, 1987
- An alternative Mg precursor for p-type doping of OMVPE grown materialJournal of Crystal Growth, 1986
- Zinc Doping of MOCVD GaAsJournal of Crystal Growth, 1984
- Use of Diethylberyllium for Metal Organic Chemical Vapor Deposition of Beryllium‐Doped Gallium ArsenideJournal of the Electrochemical Society, 1983
- The growth of Magnesium-doped GaAs by the Om-Vpe processJournal of Electronic Materials, 1983
- OM-VPE growth of Mg-doped GaAsElectronics Letters, 1982
- Recollections and reflections of MO-CVDJournal of Crystal Growth, 1981
- Beryllium doping and diffusion in molecular-beam epitaxy of GaAs and AlxGa1−xAsJournal of Applied Physics, 1977
- The incorporation and characterisation of acceptors in epitaxial GaAsJournal of Physics and Chemistry of Solids, 1975