Comparison of the low-temperature ( ≤ 600 °C) polysilicon thin-film transistors (TFTs) with two kinds of gate dielectrics
- 31 January 1995
- journal article
- Published by Elsevier in Materials Chemistry and Physics
- Vol. 39 (4) , 313-316
- https://doi.org/10.1016/0254-0584(94)01441-i
Abstract
No abstract availableKeywords
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