Spiral inductors and transmission lines in silicon technology using copper-damascene interconnects and low-loss substrates
- 1 January 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 45 (10) , 1961-1968
- https://doi.org/10.1109/22.641804
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Monolithic spiral inductors fabricated using a VLSI Cu-damascene interconnect technology and low-loss substratesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High Q inductors for wireless applications in a complementary silicon bipolar processPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-Q inductors in standard silicon interconnect technology and its application to an integrated RF power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Optimization of high Q integrated inductors for multi-level metal CMOSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Microwave inductors and capacitors in standard multilevel interconnect silicon technologyIEEE Transactions on Microwave Theory and Techniques, 1996
- Integrated RF and microwave components in BiCMOS technologyIEEE Transactions on Electron Devices, 1996
- Comparison of microwave inductors fabricated on silicon-on-sapphire and bulk siliconIEEE Microwave and Guided Wave Letters, 1996
- Multilevel monolithic inductors in silicon technologyElectronics Letters, 1995
- Coplanar waveguides and microwave inductors on silicon substratesIEEE Transactions on Microwave Theory and Techniques, 1995
- Si IC-compatible inductors and LC passive filtersIEEE Journal of Solid-State Circuits, 1990