MBE-grown vertical silicon MOSFETs with sub-0.3 μm channel lengths
- 2 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 73-75
- https://doi.org/10.1016/0022-0248(93)90580-p
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Silicon triangular barrier diodes by MBE using solid-phase epitaxial regrowthIEEE Electron Device Letters, 1984