Control of BF2 dissociation in high-current ion implantation
- 1 April 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 55 (1) , 49-54
- https://doi.org/10.1016/0168-583x(91)96134-7
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- BF 2 + Ion Implantation in Silicon: Effects of the In‐Flight DissociationJournal of the Electrochemical Society, 1988
- Furnace and Rapid Thermal Annealing of P+/n Junctions in BF 2 + ‐ Implanted SiliconJournal of the Electrochemical Society, 1985
- Empirical Modeling of Low Energy Boron Implants in SiliconJournal of the Electrochemical Society, 1985
- Residual damage in B+ and –implanted SiCanadian Journal of Physics, 1985
- Shallow boron-doped junctions in siliconJournal of Applied Physics, 1985
- Activation of shallow, high-dose BF+2 implants into silicon by rapid thermal processingJournal of Applied Physics, 1984
- Structural and electrical properties of BF+2 implanted, rapid annealed siliconApplied Physics Letters, 1984
- Rapid thermal annealing of BF2+implanted, preamorphized siliconIEEE Electron Device Letters, 1983
- Channeling effect of low energy boron implant inIEEE Electron Device Letters, 1983
- Anomalous Boron Profiles Produced by BF 2 Implantation into SiliconJournal of the Electrochemical Society, 1980