Replacement of hydrides by TBAs and TBP for the growth of various III–V materials in production scale MOVPE reactors
- 1 January 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 170 (1-4) , 97-102
- https://doi.org/10.1016/s0022-0248(96)00625-2
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Improved compositional uniformity of InGaAsP grown by low pressure metalorganic vapor phase epitaxy using tertiary butyl phosphine as the phosphorus sourceJournal of Crystal Growth, 1992
- GaInP multiwafer growth by LP-MOVPE for HBTs, lasers, LEDs or solar cellsJournal of Crystal Growth, 1992
- Structures for improved 1.5 μm wavelength lasers grown by LP-OMVPE; InGaAs-InP strained-layer quantum wells a good candidateJournal of Crystal Growth, 1991
- Detailed models of the MOVPE processJournal of Crystal Growth, 1991