Light-induced creation of metastable paramagnetic defects in hydrogenated polycrystalline silicon
- 25 October 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 71 (17) , 2733-2736
- https://doi.org/10.1103/physrevlett.71.2733
Abstract
Light-induced defect creation is demonstrated in hydrogenated polycrystalline silicon (poly-Si:H). The newly created defects are metastable as in hydrogenated amorphous silicon (a-Si:H). However, unlike a-Si:H the magnitude of the light-induced degradation decreases with repeated illumination and anneal cycles and is restored upon reexposure to monatomic hydrogen. This unique response arises from the inherent structural inhomogeneity of the polycrystalline material and establishes that hydrogen directly contributes to the metastability in poly-Si:H.Keywords
This publication has 9 references indexed in Scilit:
- Hydrogen passivation of grain boundary defects in polycrystalline silicon thin filmsApplied Physics Letters, 1993
- Atomistic origins of light-induced defects ina-SiPhysical Review Letters, 1992
- Diatomic-Hydrogen-Complex Diffusion and Self-Trapping in Crystalline SiliconPhysical Review Letters, 1989
- Temperature Dependence of Structure, Transport and Growth of Microcrystalline Silicon: Does Grain Size Correlate with Transport?MRS Proceedings, 1989
- Defects in single-crystal silicon induced by hydrogenationPhysical Review B, 1987
- Density of gap states of silicon grain boundaries determined by optical absorptionApplied Physics Letters, 1983
- Deuterium passivation of grain-boundary dangling bonds in silicon thin filmsApplied Physics Letters, 1982
- Light-induced dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1981
- Hydrogenation of transistors fabricated in polycrystalline-silicon filmsIEEE Electron Device Letters, 1980