A reaction-transport model of GaAs growth by metalorganic chemical vapor deposition using trimethyl-gallium and tertiary-butyl-arsine
- 1 August 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 131 (3-4) , 283-299
- https://doi.org/10.1016/0022-0248(93)90178-y
Abstract
No abstract availableThis publication has 41 references indexed in Scilit:
- Flow Phenomena in Chemical Vapor Deposition of Thin FilmsAnnual Review of Fluid Mechanics, 1991
- Detailed models of the MOVPE processJournal of Crystal Growth, 1991
- Transport phenomena in vertical reactors for metalorganic vapor phase epitaxyJournal of Crystal Growth, 1990
- Flow and heat transfer in CVD reactors: Comparison of Raman temperature measurements and finite element model predictionsJournal of Crystal Growth, 1990
- Low-pressure organometallic epitaxy of the III–V compoundsProgress in Solid State Chemistry, 1989
- Transport phenomena and chemical reaction issues in OMVPE of compound semiconductorsJournal of Crystal Growth, 1989
- Metal-organic vapor phase epitaxy of compound semiconductorsMaterials Science Reports, 1987
- Metalorganic chemical vapor deposition of III-V semiconductorsJournal of Applied Physics, 1985
- High purity GaAs prepared from trimethylgallium and arsineJournal of Crystal Growth, 1981
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1969