Characteristics of HgCdTe/CdTe hetero-epitaxial system and mid-wave diodes on 2 inch silicon
- 1 May 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 201-202, 975-979
- https://doi.org/10.1016/s0022-0248(98)01503-6
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- High quality large-area CdTe(211)B on Si(211) grown by molecular beam epitaxyApplied Physics Letters, 1997
- Heteroepitaxy of CdTe on {211} Si using crystallized amorphous ZnTe templatesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- MBE-grown HgCdTe heterojunction structures for IR FPAsPublished by SPIE-Intl Soc Optical Eng ,1996
- Heteroepitaxy of CdTe on {211}Si substrates by molecular beam epitaxyJournal of Crystal Growth, 1996
- Molecular beam epitaxial HgCdTe material characteristics and device performance: Reproducibility statusJournal of Electronic Materials, 1995
- Molecular-beam epitaxial growth of CdTe(112) on Si(112) substratesApplied Physics Letters, 1995
- Large improvement in HgCdTe photovoltaic detector performances at LETIJournal of Electronic Materials, 1993
- HgCdTe infrared diode arraysSemiconductor Science and Technology, 1991
- Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100)Applied Physics Letters, 1989
- Silicon surface passivation by hydrogen termination: A comparative study of preparation methodsJournal of Applied Physics, 1989