Low-threshold 1.3-/spl mu/m InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy
- 1 February 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 12 (2) , 128-130
- https://doi.org/10.1109/68.823492
Abstract
1.3-μm InGaAsN:Sb-GaAs single-quantum-well laser diodes have been grown by a solid source molecular beam epitaxy (MBE) using Sb as a surfactant. A record low threshold of 1.02 kA/cm 2 and a slope efficiency of 0.12 W/A are obtained for broad-area laser diodes under pulsed operation at room temperature. A characteristic temperature of 64 K and a lasing wavelength temperature dependence of 0.38 nm//spl deg/C are reported.Keywords
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