Chemical vapor deposition growth and properties of TaCxNy
- 15 October 2002
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 418 (2) , 145-150
- https://doi.org/10.1016/s0040-6090(02)00724-1
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Low temperature chemical vapor deposition of tungsten carbide for copper diffusion barriersThin Solid Films, 2001
- Impact of the Unique Physical Properties of Copper in Silicon on Characterization of Copper Diffusion BarriersPhysica Status Solidi (b), 2000
- Diffusion barrier properties of single- and multilayered quasi-amorphous tantalum nitride thin films against copper penetrationJournal of Applied Physics, 2000
- Effectiveness of Ti, TiN, Ta, TaN, and W2N as barriers for the integration of low-k dielectric hydrogen silsesquioxaneJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000
- A Study on CVD TaN as a Diffusion Barrier for Cu InterconnectsMRS Proceedings, 2000
- Chemical Vapor Deposition of Tantalum Nitride Films Using Pentakis(Diethylamido)Tantalum and AmmoniaMRS Proceedings, 1998
- Diffusion barrier properties of TaC between Si and CuThin Solid Films, 1997
- Preparation, structure and properties of TaN and TaC films obtained by ion beam assisted depositionNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1997
- Comparative study of tantalum and tantalum nitrides (Ta2N and TaN) as a diffusion barrier for Cu metallizationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Chemical vapor deposition of vanadium, niobium, and tantalum nitride thin filmsChemistry of Materials, 1993