Homojunction and heterojunction silicon solar cells deposited by low temperature–high frequency plasma enhanced chemical vapour deposition
- 1 February 2002
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 405 (1-2) , 248-255
- https://doi.org/10.1016/s0040-6090(01)01709-6
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Ultrathin μc-Si films deposited by PECVDThin Solid Films, 2001
- HITTM cells?high-efficiency crystalline Si cells with novel structureProgress In Photovoltaics, 2000
- In situ observation of low temperature growth of crystalline silicon using reflection high-energy electron diffractionJournal of Non-Crystalline Solids, 2000
- Very high frequency hydrogen plasma treatment of growing surfaces: a study of the p-type amorphous to microcrystalline silicon transitionJournal of Non-Crystalline Solids, 2000
- Photovoltaic materials, past, present, futurePublished by Elsevier ,2000
- Recombination mechanisms in amorphous silicon/crystalline silicon heterojunction solar cellsJournal of Applied Physics, 2000
- In situ measurements of changes in the structure and in the excess charge-carrier kinetics at the silicon surface during hydrogen and helium plasma exposureJournal of Applied Physics, 1995
- Optical functions of chemical vapor deposited thin-film silicon determined by spectroscopic ellipsometryApplied Physics Letters, 1993
- Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H FilmsJapanese Journal of Applied Physics, 1980
- Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen. I. Dielektrizitätskonstanten und Leitfähigkeiten der Mischkörper aus isotropen SubstanzenAnnalen der Physik, 1935