A selective CVD tungsten local interconnect technology
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 450-453
- https://doi.org/10.1109/iedm.1988.32852
Abstract
A novel local interconnect technology utilizing polysilicon strapped with selective CVD (chemical vapor deposition) tungsten (W) has been developed for advanced CMOS applications. Problems associated with etching of a local interconnect material do not exist, since the local interconnects are of polysilicon and defined at the same level as the gate electrodes. CVD W deposited on the polysilicon serves as a very attractive gate shunt and local interconnect because of its low resistivity and ability to carry a high-density current reliably. Both n- and p-channel MOSFETs have been successfully fabricated with this technology. An alternate version of this technology utilizing a second polysilicon layer for the formation of the local interconnects is also discussed.Keywords
This publication has 4 references indexed in Scilit:
- A multilevel tungsten interconnect technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Use of the polysilicon gate layer for local interconnect in a CMOS technology incorporating LDD structuresIEEE Transactions on Electron Devices, 1988
- HPSAC—A silicided amorphous-silicon contact and interconnect technology for VLSIIEEE Transactions on Electron Devices, 1987
- Titanium nitride local interconnect technology for VLSIIEEE Transactions on Electron Devices, 1987