200 GHz pulsed GaAs-IMPATT diodes
- 26 November 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (24) , 2351-2353
- https://doi.org/10.1049/el:19981628
Abstract
GaAs double-drift Read IMPATT diodes for pulsed operation are designed for very high current densities (175 kA/cm2) at frequencies up to 200 GHz. The active devices are developed by using Monte-Carlo simulations in addition to a large-signal drift-diffusion model. RF output powers of 1 W at 176.5 GHz and 0.3 W at 198 GHz are realised.Keywords
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