140 GHz GaAs double-Read IMPATT diodes
- 30 March 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (7) , 582-583
- https://doi.org/10.1049/el:19950390
Abstract
CW GaAs double-Read IMPATT diodes for D-band frequencies are designed and tested. For reproducible RF impedance matching the module encapsulation technique is applied. Ohmic losses of the active device are reduced by a titanium-Schottky contact instead of an alloyed ohmic n+-contact. At 144 GHz 100 mW RF power with a conversion efficiency of 5% is realised.Keywords
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