Individual, attractive defect centers in the SiO2-Si interface of ?m-sized MOSFETs

This publication has 13 references indexed in Scilit:

• Single defects and noise in sub-μ MOSFETs
  Published by SPIE-Intl Soc Optical Eng ,1990
• Individual defects at the Si:SiO₂interface
  Semiconductor Science and Technology, 1989
• Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise
  Advances in Physics, 1989
• Anomalous telegraph noise in small-area silicon metal-oxide-semiconductor field-effect transistors
  Physical Review B, 1988
• 1fnoise and other slow, nonexponential kinetics in condensed matter
  Reviews of Modern Physics, 1988
• Deep level transient spectroscopy on single, isolated interface traps in field-effect transistors
  Applied Physics Letters, 1988
• Capture and emission kinetics of individual Si:SiO2 interface states
  Applied Physics Letters, 1986
• Proceedings of the 17th International Conference on the Physics of Semiconductors
  Published by Springer Nature ,1985
• Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (1f?) Noise
  Physical Review Letters, 1984
• Flicker Noise in Electronic Devices
  Published by Elsevier ,1979