Buried-shallow-implant (Bsi) process for High Efficiency Microwave power Mesfets
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- High-efficiency 35-GHz GaAs MESFET'sIEEE Transactions on Electron Devices, 1987
- Limited Reaction Processing: Silicon and III–V MaterialsMRS Proceedings, 1987
- Profile Studies of Ion-Implanted MESFET'sIEEE Transactions on Microwave Theory and Techniques, 1983
- Modeling the influence of carrier profiles on MESFET characteristicsIEEE Transactions on Electron Devices, 1980
- Control of gate—Drain avalanche in GaAs MESFET'sIEEE Transactions on Electron Devices, 1980
- Electron mobility and free-carrier absorption in GaAs: Determination of the compensation ratioJournal of Applied Physics, 1979