Limited Reaction Processing: Silicon and III–V Materials
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
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- The origin of a highly resistive layer at a growth-interrupted interface of GaAs grown by molecular-beam epitaxyJournal of Applied Physics, 1987
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- Minority-carrier properties of thin epitaxial silicon films fabricated by limited reaction processingJournal of Applied Physics, 1986
- Limited reaction processing: In-situ metal—oxide—semiconductor capacitorsIEEE Electron Device Letters, 1986
- Thin, highly doped layers of epitaxial silicon deposited by limited reaction processingApplied Physics Letters, 1986
- Limited reaction processing: Silicon epitaxyApplied Physics Letters, 1985
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- Metal organics vapour phase epitaxy of GaAs : Raman studies of complexes formationRevue de Physique Appliquée, 1985
- Improved mobility in OM-VPE-grown Ga
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