Profile Studies of Ion-Implanted MESFET's
- 1 December 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 31 (12) , 1066-1071
- https://doi.org/10.1109/tmtt.1983.1131663
Abstract
A study of ion-implanted MESFET performance as a function of the implantation energy and fluency, and including the effects of deep-level trapping-state concentrations in the substrate, has been conducted. Carrier concentrations as a function of depth are determined through the use of LSS theory and a profiling model. An analytic device model, which computes both dc and RF characteristics, is then employed to predict MESFET performances. The study includes the effects of depth-dependent transport properties and has indicated a number of design rules for the fabrication of optimized ion-implanted devices.Keywords
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