Epitaxial growth of BaMgF4 films on Si(100) and (111) substrates: An approach to ferroelectric/semiconductor heterostructures

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Abstract
Growth of BaMgF4 films on both Si(100) and (111) substrates has been attempted using molecular beam epitaxy. (011)‐ and (120)‐oriented epitaxial films are successfully grown at temperatures ∼500 °C on Si(100) and (111) substrates, respectively. It has been found that the best channeling minimum yield in Rutherford backscattering spectrometry is about 0.55 for a BaMgF4(120) film on Si(111), and that the films are composed of crystallites whose orientations reflect the substrate symmetry.