Ion bombardment of AlN films deposited in a reactive sputtering process with accurate control of the mass flow of the reactive gas
- 15 April 1992
- journal article
- Published by Elsevier in Surface and Coatings Technology
- Vol. 51 (1-3) , 500-508
- https://doi.org/10.1016/0257-8972(92)90289-m
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- The influence of the reactive gas flow on the properties of AIN sputter-deposited filmsMaterials Science and Engineering: A, 1991
- Stress dependence of reactively sputtered aluminum nitride thin films on sputtering parametersJournal of Vacuum Science & Technology A, 1989
- Properties of aluminum nitride films by an ion beam and vapor deposition methodNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Defect structure and superconducting transition temperature of ion-irradiated refractory metal carbides and nitridesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Properties of AlN films deposited on N-implanted AlNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Fatigue deformation behavior of nitrogen-ion-implanted surface layers of type 304 stainless steelThin Solid Films, 1983
- The dependence of aluminum nitride film crystallography on sputtering plasma compositionJournal of Vacuum Science & Technology A, 1983
- Deposition of A1N thin films by magnetron reactive sputteringThin Solid Films, 1981
- The Preparation and Properties of Aluminum Nitride FilmsJournal of the Electrochemical Society, 1975
- Some properties of thin aluminium nitride films formed in a glow dischargeThin Solid Films, 1974