Band-edge and deep level photoluminescence of pseudomorphic Si1−x−yGexCy alloys
- 14 February 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (7) , 875-877
- https://doi.org/10.1063/1.110981
Abstract
Photoluminescence of strained Si1−x−yGexCy alloys grown by rapid thermal chemical vapor deposition on Si(100) is investigated. Two dominant features are reported: At low pump intensities, the photoluminescence is dominated by a deep level broad luminescence peak around 800 meV whereas at high pump intensities, a well‐resolved band‐edge luminescence (no phonon and transverse optic replica) is observed. At 77 K, we attribute this band‐edge feature to an electron‐hole plasma luminescence of the ternary alloy. The dependences of the deep level and band‐edge peaks versus the excitation power density are, respectively square‐root‐like or superlinear. A blue shift of the energy gap of Si1−x−yGexCy alloys with respect to Si1−xGex alloy is observed. The blue shift increase with carbon content corresponds to what is expected for the bulk alloy. An eventual influence of the strain relaxation cannot be excluded.Keywords
This publication has 13 references indexed in Scilit:
- Growth and characterization of strain compensated Si1−x−y epitaxial layersMaterials Letters, 1993
- Photoluminescence study of Si1−xGex/Si heterostructures grown by molecular beam epitaxy and ultrahigh vacuum chemical vapor depositionJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Band edge and deep level photoluminescence of fully strained Si1−xGex/Si alloysThin Solid Films, 1992
- Photoluminescence of confined excitons in MBE-grown Si1 − xGex/Si(100) single quantum wellsThin Solid Films, 1992
- Luminescence origins in molecular beam epitaxial Si1−xGexApplied Physics Letters, 1992
- Growth and strain compensation effects in the ternary Si1−x−yGexCy alloy systemApplied Physics Letters, 1992
- Photoluminescence from electron-hole plasmas confined in Si/Si1−xGex/Si quantum wellsApplied Physics Letters, 1992
- Luminescence from Si/Si1−xGex heterostructures and superlatticesApplied Physics Letters, 1992
- Optical band gap of the ternary semiconductor Si1−x−yGexCyJournal of Applied Physics, 1991
- Well-resolved band-edge photoluminescence of excitons confined in strained quantum wellsPhysical Review Letters, 1991