Effects of pressure on the formation of phosphorus-doped microcrystalline silicon films deposited by radio-frequency glow discharge

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Abstract
Phosphorus-doped microcrystalline silicon (P-doped μc-Si:H) has been prepared by radio- frequency glow discharge method. Effects of pressure on the formation of microcrystalline silicon film have been explored. If the hydrogen dilution ratio R is high enough, highly conductive P-doped μc-Si:H films can be obtained under the appropriate pressure. However, for lower R there is a critical pressure for the formation of microcrystalline phase. Above this pressure the film is mostly in amorphous phase and below it microcrystalline phase is formed. The structural and electrical properties studied by Raman spectroscopy, transmission electron spectroscopy, Fourier transform infrared spectroscopy, and dark conductivity measurement are reported. An ion bombardment assistance hydrogen selective etching model consistent with structural and electrical properties of μc-Si:H film is proposed and discussed.